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| savantic semiconductor product specification silicon npn power transistors 2n5190 2n5191 2N5192 d escription with to-126 package complement to type 2n5193/5194/5195 excellent safe operating area applications for use in medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2n5190 40 2n5191 60 v cbo collector-base voltage 2N5192 open emitter 80 v 2n5190 40 2n5191 60 v ceo collector-emitter voltage 2N5192 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i cm collector current-peak 7 a i b base current 1 a p d total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 3.12 /w
savantic semiconductor product specification 2 silicon npn power transistors 2n5190 2n5191 2N5192 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n5190 40 2n5191 60 v ceo(sus) collector-emitter sustaining voltage 2N5192 i c =0.1a; i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =1.5a ;i b =0.15a 0.6 v v cesat-2 collector-emitter saturation voltage i c =4a ;i b =1a 1.4 v v be base-emitter on voltage i c =1.5a ; v ce =2v 1.2 v 2n5190 v ce =40v; i b =0 2n5191 v ce =60v; i b =0 i ceo collector cut-off current 2N5192 v ce =80v; i b =0 1.0 ma 2n5190 v cb =40v; i e =0 2n5191 v cb =60v; i e =0 i cbo collector cut-off current 2N5192 v cb =80v; i e =0 0.1 ma 2n5190 v ce =40v; v be(off) =1.5v t c =125 0.1 2.0 2n5191 v ce =60v; v be(off) =1.5v t c =125 0.1 2.0 i cex collector cut-off current 2N5192 v ce =80v; v be(off) =1.5v t c =125 0.1 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma 2n5190 2n5191 25 100 h fe-1 dc current gain 2N5192 i c =1.5a ; v ce =2v 20 80 2n5190 2n5191 10 h fe-2 dc current gain 2N5192 i c =4a ; v ce =2v 7 f t transition frequency i c =1a ; v ce =10v;f=1mhz 2 mhz savantic semiconductor product specification 3 silicon npn power transistors 2n5190 2n5191 2N5192 package outline fig.2 outline dimensions |
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